ION-IMPLANTED POTASSIUM IN TUNGSTEN

被引：7

作者：

KIM, KT

WELSCH, G

机构：

[1] Department of Materials Science and Engineering, Case Western Reserve University, Cleveland

来源：

MATERIALS LETTERS | 1990年 / 9卷 / 09期

关键词：

D O I：

10.1016/0167-577X(90)90165-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Potassium was ion-implanted at 180 keV into recrystallized lamp-grade tungsten with dose of 5 × 1016/cm2. In the as-implanted condition potassium atoms are dispersed in a microcrystalline tungsten lattice. Upon annealing, very small and finely distributed potassium bubbles develop. The bubbles geometries are {011}-faceted dodecahedra with truncation on {001} planes. The crystal orientation of condensed potassium precipitates inside the bubbles is identical with the orientation of the tungsten matrix. © 1990.

引用

页码：295 / 301

页数：7

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