A FAST TECHNIQUE FOR THE QUANTITATIVE-ANALYSIS OF CHANNELING RBS SPECTRA

被引：19

作者：

CEROFOLINI, GF ^{[1
]}

CORNI, F ^{[1
]}

OTTAVIANI, G ^{[1
]}

TONINI, R ^{[1
]}

机构：

[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 71卷 / 04期

关键词：

D O I：

10.1016/0168-583X(92)95362-U

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A straightforward method for the analysis of channeling RBS spectra is developed and validated. This method needs a minimum of computational complexity and does not require the a priori knowledge of the location of the scattering centres and of their dechanneling cross section. The method is applied to channeling RBS spectra obtained along the [100] direction in a hydrogen-implanted (100) silicon crystal to verify that the evaluated displaced-atom depth distribution is independent of the probe energy.

引用

页码：441 / 444

页数：4

共 8 条

[1] RADIAL-DISTRIBUTION OF ION-INDUCED DEFECTS DETERMINED BY CHANNELING MEASUREMENTS [J].

BAERI, P ;

CAMPISANO, SU ;

CIAVOLA, G ;

FOTI, G ;

RIMINI, E .

NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F) :237-240

[2] DEFECT DEPTH PROFILES IN B+ AND AS+ IMPLANTED SI [J].

BUDINOV, HI ;

KARPUZOV, DS .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 :1041-1044

[3] CHANNELING ANALYSIS OF STACKING DEFECTS IN EPITAXIAL SI LAYERS [J].

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E ;

PICRAUX, ST .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :371-376

[4] LATTICE DISORDER IN ALPHA-AL2O3 INDUCED BY NIOBIUM IMPLANTATION [J].

CANUT, B ;

ROMANA, L ;

THEVENARD, P ;

MONCOFFRE, N .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4) :128-132

[5] STRUCTURE AND EVOLUTION OF THE DISPLACEMENT FIELD IN HYDROGEN-IMPLANTED SILICON [J].

CEROFOLINI, GF ;

MEDA, L ;

VOLPONES, C ;

OTTAVIANI, G ;

DEFAYETTE, J ;

DIERCKX, R ;

DONELLI, D ;

ORLANDINI, M ;

ANDERLE, M ;

CANTERI, R ;

CLAEYS, C ;

VANHELLEMONT, J .

PHYSICAL REVIEW B, 1990, 41 (18) :12607-12618

[6]

Chu W.-K., 1978, BACKSCATTERING SPECT

[7]

FELDMAN LC, 1982, MATERIALS ANAL ION C, P41103

[8]

van Vliet D., 1973, CHANNELING, P37

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