ANNEALING TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN N-IMPLANTED GAAS1-XPX (X = 0.36)

被引:11
作者
MAKITA, Y [1 ]
GONDA, S [1 ]
机构
[1] ELECTROTECH LAB,TANASHI,TOKYO,JAPAN
关键词
D O I
10.1143/JJAP.13.565
中图分类号
O59 [应用物理学];
学科分类号
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页码:565 / 566
页数:2
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  • [1] LASER OPERATION OF GAAS1-XPX-N(X=0.37,77 DEGREES K) ON PHOTOPUMPED NN3 PAIR TRANSITIONS
    DUPUIS, RD
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    CRAFORD, MG
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    KEUNE, DL
    [J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 369 - 371
  • [2] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N
    HOLONYAK, N
    DUPUIS, RD
    MACKSEY, HM
    GROVES, WO
    CRAFORD, MG
    [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4148 - &