PHOTOCONDUCTIVITY AND TRAP DISTRIBUTION IN CDIN2S4

被引：42

作者：

ANEDDA, A ^{[1
]}

GARBATO, L ^{[1
]}

RAGA, F ^{[1
]}

SERPI, A ^{[1
]}

机构：

[1] UNIV CAGLIARI, CNR, GRP NAZL STRUTTURA MAT, I-09100 CAGLIARI, ITALY

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1978年 / 50卷 / 02期

关键词：

D O I：

10.1002/pssa.2210500234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：643 / 650

页数：8

共 37 条

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[9] BONCHBRUEVICH VL, 1966, ELECTRONIC THEORY HE, P21
[10] OPTICAL PROPERTIES OF A QUASI-DISORDERED SEMICONDUCTOR - ZNIN2S4
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