X-RAY-DETECTORS BASED ON SEMIINSULATING GAAS SUBSTRATE

被引：19

作者：

BENZ, KW

IRSIGLER, R

LUDWIG, J

ROSENZWEIG, J

RUNGE, K

SCHAFER, F

SCHNEIDER, J

WEBEL, M

机构：

[1] UNIV FREIBURG,INST KRISTALLOG,W-7800 FREIBURG,GERMANY

[2] FRAUNHOFER INST APPL SOLID STATE PHYS,FREIBURG,GERMANY

[3] FREIBURGER MATERIALFORSCHUNGSZENTRUM,FREIBURG,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 322卷 / 03期

关键词：

D O I：

10.1016/0168-9002(92)91220-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Semi-insulating GaAs is suitable as detector for X-rays and particles. Compared to silicon, charge carriers in GaAs have less effective mass, so they gain a higher acceleration. The detectors operate as Schottky diodes. Design and processing were carried out at the IAF in Freiburg. The layout contains quadratic diodes of various sizes (2 x 2 mm2, 3 x 3 mm2, etc.) and also microstrip detectors. Test measurements were made with alpha-, beta- and gamma-rays. For the first time X-rays down to 20 keV have been observed with room temperature GaAs. With gamma-radiation of Co-57, 122 keV, an energy resolution of 18% FWHM was obtained. It is planned to integrate signal processing fast electronics on the same wafer. Also discussed is a data transfer by optoelectronical means, as for example laser diodes and MSM photodiodes.

引用

页码：493 / 498

页数：6

共 6 条

[1] A PRELIMINARY-STUDY OF GAAS SOLID-STATE DETECTORS FOR HIGH-ENERGY PHYSICS [J].

BERTIN, R ;

DAURIA, S ;

DELPAPA, C ;

FIORI, F ;

LISOWSKI, B ;

OSHEA, V ;

PELFER, PG ;

SMITH, K ;

ZICHICHI, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1990, 294 (1-2) :211-218

[2]

FEENSTRA RM, 1987, PHYS REV LETT, V58, P2

[3] PICOSECOND GAAS X-RAY AND GAMMA-RAY PHOTODETECTORS [J].

FRIANT, A ;

SALIOU, C ;

GALLI, R ;

BARDAY, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1989, 283 (02) :318-322

[4] 10 GBIT/S MONOLITHIC INTEGRATED OPTOELECTRONIC RECEIVER USING AN MSM PHOTODIODE AND ALGAAS/GAAS HEMTS [J].

HURM, V ;

ROSENZWEIG, J ;

LUDWIG, M ;

AXMANN, A ;

BENZ, W ;

BERROTH, M ;

OSORIO, R ;

HULSMANN, A ;

KAUFEL, G ;

KOHLER, K ;

RAYNOR, B ;

SCHNEIDER, J .

MICROELECTRONIC ENGINEERING, 1991, 15 (1-4) :275-278

[5]

HURM V, 1991, ELECTRON LETT, V27, P5

[6]

PEARTON SJ, 1981, DEEP LEVEL TRANSIENT, pE503

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