ULTRASONIC ATTENUATION IN GERMANIUM AND SILICON

被引：15

作者：

BLATT, FJ

机构：

来源：

PHYSICAL REVIEW | 1957年 / 105卷 / 03期

关键词：

D O I：

10.1103/PhysRev.105.1118

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1118 / 1119

页数：2

共 7 条

[1] ELASTORESISTANCE IN P-TYPE GE AND SI
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[2] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS
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SHOCKLEY, W
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[3] FREQUENCY DEPENDENCE OF ULTRASONIC ATTENUATION IN GERMANIUM
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TRUELL, R
[J]. JOURNAL OF APPLIED PHYSICS, 1956, 27 (10) : 1219 - 1226
[4] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
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[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[5] ELASTOGALVANOMAGNETIC EFFECT AND INTERVALLEY SCATTERING IN N-TYPE GERMANIUM
KEYES, RW
[J]. PHYSICAL REVIEW, 1956, 103 (05): : 1240 - 1245
[6] AN ELECTRON TRANSFER MECHANISM FOR ULTRASONIC ATTENUATION IN METALS
KITTEL, C
[J]. ACTA METALLURGICA, 1955, 3 (03): : 295 - 297
[7] PIEZORESISTANCE EFFECT IN GERMANIUM AND SILICON
SMITH, CS
[J]. PHYSICAL REVIEW, 1954, 94 (01): : 42 - 49