FIELD ENHANCED LATTICE SCATTERING IN SEMICONDUCTORS

被引：21

作者：

PARANJAPE, VV

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1962年 / 80卷 / 516期

关键词：

D O I：

10.1088/0370-1328/80/4/322

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：971 / &

共 13 条

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[7] PARANJAPE BV, 1961, P PHYS SOC LONDON, V78, P516
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[10] HOT ELECTRONS IN GERMANIUM AND OHMS LAW
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