THRESHOLD CURRENT DENSITY IN SOLUTION-GROWN GAAS LASER DIODES

[1] NELSON H, 1963, RCA REV, V24, P603

[2] A RELATION BETWEEN CURRENT DENSITY AT THRESHOLD AND LENGTH OF FABRY-PEROT TYPE GAAS LASERS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1243 - &

[3] OPTICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL AND DIFFUSED GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 5 - &

[4] SUSAKI W, UNPUBLISHED DATA

[5] SUSAKI W, 1965, JAPAN J APPL PHYS, V5, P845

[6] ABSORPTION DATA OF LASER-TYPE GAAS AT 300 DEGREES + 77 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 350 - &

[7] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN P-TYPE GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2815 - &

[1] NELSON H, 1963, RCA REV, V24, P603

[2] A RELATION BETWEEN CURRENT DENSITY AT THRESHOLD AND LENGTH OF FABRY-PEROT TYPE GAAS LASERS [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1243 - &

[3] OPTICAL AND ELECTRICAL PROPERTIES OF EPITAXIAL AND DIFFUSED GAAS INJECTION LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 5 - &

[4] SUSAKI W, UNPUBLISHED DATA

[5] SUSAKI W, 1965, JAPAN J APPL PHYS, V5, P845

[6] ABSORPTION DATA OF LASER-TYPE GAAS AT 300 DEGREES + 77 DEGREES K [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 350 - &

[7] QUANTUM EFFICIENCY AND RADIATIVE LIFETIME IN P-TYPE GALLIUM ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) : 2815 - &