METAL-SEMICONDUCTOR IMPATT DIODE

被引：6

作者：

SZE, SM

LEPSELTER, MP

MACDONALD, RW

机构：

[1] Bell Telephone Laboratories, Inc., Murray Hill

来源：

SOLID-STATE ELECTRONICS | 1969年 / 12卷 / 02期

关键词：

D O I：

10.1016/0038-1101(69)90118-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microwave cw oscillation at 8 GHz has been obtained in passivated metal-semiconductor diodes. The diodes were fabricated using the beam-lead process of PtSi on epitaxial n-type Si substrates, including a diffused p-type guard ring. The result indicates that (1) the devices behave similarly as abrupt p-n junctions with the same background dopings, (2) the devices are passivated and can be incorporated into integrated circuits, and (3) the devices can handle high power density. Although the efficiency is low for the preliminary devices, this shortcoming is attributed to a non-optimum doping profile. © 1969.

引用

页码：107 / +

页数：1

共 10 条

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