ANDREEV REFLECTION AT SUPERCONDUCTING CONTACTS TO GAAS/ALGAAS HETEROSTRUCTURES

被引：29

作者：

LENSSEN, KMH ^{[1
]}

MATTERS, M ^{[1
]}

HARMANS, CJPM ^{[1
]}

MOOIJ, JE ^{[1
]}

LEYS, MR ^{[1
]}

VANDERVLEUTEN, W ^{[1
]}

WOLTER, JH ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT APPL PHYS,5600 MB EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 15期

关键词：

D O I：

10.1063/1.110598

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly transmissive ohmic contacts to the two-dimensional electron gas in GaAs/AlGaAs heterostructures have been made. For these contacts, which are of mum scale, a newly developed process of Ti/Sn evaporation and diffusion has been used. Devices consisting of these superconducting contacts combined with gate structures have shown clear evidence for the occurrence of Andreev reflection. Moreover a marked effect of the gate voltage on the dV/dI-V characteristics has been found, which proves that superconductivity has been induced into the semiconductor.

引用

页码：2079 / 2081

页数：3

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