EMISSION PROPERTIES IN ELECTROLYTICALLY PREPARED CDTE P-N-JUNCTIONS

被引:10
作者
SALDANA, XI [1 ]
VAZQUEZLOPEZ, C [1 ]
ZEHE, A [1 ]
NAVARRO, H [1 ]
TRIBOULET, R [1 ]
机构
[1] CNRS,PHYS SOLIDES LAB,F-92190 BELLEVUE,FRANCE
关键词
D O I
10.1063/1.92763
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:433 / 434
页数:2
相关论文
共 9 条
[1]   LIGHT-EMITTING DIODES [J].
BERGH, AA ;
DEAN, PJ .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02) :156-+
[2]  
de Nobel D., 1959, PHILIPS RES REPORTS, V14, P361
[3]   LUMINESCENT PROPERTIES OF CDTE DIODE [J].
ISHIKAWA, R ;
MITSUMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1966, 5 (12) :1171-+
[4]   SEMICONDUCTING CADMIUM TELLURIDE [J].
JENNY, DA ;
BUBE, RH .
PHYSICAL REVIEW, 1954, 96 (05) :1190-1191
[5]   LATTICE-DYNAMICS OF CADMIUM TELLURIDE [J].
ROWE, JM ;
NICKLOW, RM ;
PRICE, DL ;
ZANIO, K .
PHYSICAL REVIEW B, 1974, 10 (02) :671-675
[6]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P636
[7]  
VASQUEZLOPEZ C, 1979, J APPL PHYS, V50, P5391
[9]  
ZANIO K, 1978, SEMICONDUCT SEMIMET, V13, P162