EXTENDED-HUCKEL-THEORY CALCULATIONS FOR POSITIVE DIVACANCY IN SILICON

被引：13

作者：

AMMERLAAN, CAJ

WOLFRAT, JC

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 89卷 / 01期

关键词：

D O I：

10.1002/pssb.2220890110

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：85 / 94

页数：10

共 21 条

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[9] SEMIEMPIRICAL CALCULATION OF DEEP LEVELS - DIVACANCY IN SI [J].

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[10]

Messmer R. P., 1975, Lattice Defects in Semiconductors, 1974, P44

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