ELECTRON WAVE DIFFRACTION BY SEMICONDUCTOR GRATINGS - RIGOROUS ANALYSIS AND DESIGN PARAMETERS

被引：10

作者：

HENDERSON, GN ^{[1
]}

GLYTSIS, EN ^{[1
]}

GAYLORD, TK ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,MICROELECTR RES CTR,ATLANTA,GA 30332

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 04期

关键词：

FIELD-EFFECT TRANSISTOR; TRANSPORT; GAAS;

D O I：

10.1063/1.105456

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An exact rigorous coupled-wave analysis has been developed to model ballistic electron wave diffraction by gratings with periodic effective mass and/or potential energy variations. Design expressions have been derived to calculate diffracted angles, to identify evanescent orders, and to identify the Bragg condition. Design expressions for Bragg regime (up to 100% diffraction efficiency in a single order) and Raman-Nath regime (high diffraction efficiency divided among multiple orders) diffraction are presented along with example Ga(1-x)Al(x)As grating designs. Design procedures for ballistic electron switches, multiplexers, spectrometers, and electron waveguide couplers are described.

引用

页码：440 / 442

页数：3

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