MOS CHARACTERISTICS OF FLUORINATED GATE DIELECTRICS GROWN BY RAPID THERMAL-PROCESSING IN O-2 WITH DILUTED NF3

被引：17

作者：

LO, GQ ^{[1
]}

TING, W ^{[1
]}

KWONG, DL ^{[1
]}

KUEHNE, J ^{[1
]}

MAGEE, CW ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75265

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Rapid thermal processing (RTP) is applied to the fabrication of ultrathin (~ 10 nm) high-quality fluorinated oxides in O, + NF3 for the first time. NF3 (diluted in N2) was used as the F source gas and was introduced either prior to rapid thermal oxidation (RTO) or with O2 during the initial stage of RTO. The electrical characteristics of MOS capacitors have been studied and correlated with the chemical properties. It is found that SiO2 with a small amount of F incorporation shows less interface state generation (ΔDit) under F-N injection, whereas excessive F incorporation is detrimental. © 1990 IEEE

引用

页码：511 / 513

页数：3

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