A SYMMETRY PRINCIPLE FOR EPITAXIAL ROTATION

被引:59
作者
GREY, F [1 ]
BOHR, J [1 ]
机构
[1] MAX PLANCK INST SOLID STATE RES, W-7000 STUTTGART 80, GERMANY
来源
EUROPHYSICS LETTERS | 1992年 / 18卷 / 08期
关键词
THIN FILM GROWTH; STRUCTURE; AND EPITAXY; SOLID SURFACE STRUCTURE; SURFACE PHASE TRANSITIONS AND CRITICAL PHENOMENA;
D O I
10.1209/0295-5075/18/8/009
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Two-dimensional and three-dimensional crystals adsorbed on crystalline substrate are often observed to be rotated, in the plane of the interface, by some apparently arbitrary angle relative to high-symmetry directions of the substrate. In cases where the lattice mismatch between adsorbate and substrate can be varied, it is frequently found that the rotation angle varies with the mismatch. Theoretical explanations for this epitaxial rotation have focused on the elastic properties and on commensurate structures. Here, an alternative explanation is proposed, based on finite-size effects. The adsorbate rotations that result from such considerations agree exactly with a simple symmetry principle which, it is argued, underlies the phenomenon of epitaxial rotation.
引用
收藏
页码:717 / 722
页数:6
相关论文
共 10 条