PHOTON-CONTROLLED FABRICATION OF AMORPHOUS SUPERLATTICE STRUCTURES USING ARF (193 NM) EXCIMER LASER PHOTOLYSIS

被引:14
作者
LOWNDES, DH
GEOHEGAN, DB
ERES, D
PENNYCOOK, SJ
MASHBURN, DN
JELLISON, GE
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D O I
10.1063/1.99732
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O59 [应用物理学];
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页码:1868 / 1870
页数:3
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共 34 条
[1]  
BARBEE TW, IN PRESS MATER RES S, V103
[2]   TIME-RESOLVED OPTICAL REFLECTIVITY AND EMISSIVITY DURING AND AFTER CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS AND CRYSTALLINE SILICON [J].
BEERS, AM ;
HINTZEN, HTJM ;
BLOEM, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) :1426-1433
[3]  
BOYER PK, 1983, MATER RES SOC S P, V17, P119
[4]  
DEUTSCH TF, 1983, MATER RES SOC S P, V17, P129
[5]  
DOHLER GH, 1985, SYNTHETIC MODULATED, pCH5
[6]   ARF-LASER PHOTO-DISSOCIATION OF NH3 AT 193-NM - INTERNAL ENERGY-DISTRIBUTIONS IN NH2X2B1 AND A2A1, AND 2-PHOTON GENERATION OF NH-A3-PI AND B1-SIGMA+ [J].
DONNELLY, VM ;
BARONAVSKI, AP ;
MCDONALD, JR .
CHEMICAL PHYSICS, 1979, 43 (02) :271-281
[7]  
EDEN JG, 1983, MATER RES SOC S P, V17, P185
[8]  
EMERY KA, 1984, MATER RES SOC S P, V29, P81
[9]  
ERES D, 1988, MATER RES SOC S P, V101, P355
[10]  
FABER J, 1982, AIP C P, V89