MAGNETOTRANSPORT IN AN INVERSION LAYER ON P-INSB

被引：26

作者：

DARR, A

KOTTHAUS, JP

机构：

[1] Physik-Department, Technische Universität München

来源：

SURFACE SCIENCE | 1978年 / 73卷 / 01期

关键词：

D O I：

10.1016/0039-6028(78)90540-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In a space charge layer at the surface of a semiconductor a series of subbands is formed. In the surface of Si, the most widely investigated system, usually only the lowest subband is occupied. In the narrow-gap semiconductors, however, the low effective mass leads to a small density of states and hence several subbands may be occupied even at moderate surface carrier densities [1,2,3]. © 1978.

引用

页码：549 / 552

页数：4