SULPHUR DIFFUSION IN COPPER - DEPARTURE FROM ARRHENIUS PLOT

被引:24
作者
MOYA, F
MOYAGONT.GE
CABANEBR.F
机构
[1] Laboratoire de Métallurgie, Faculté des Sciences de Marseille, Centre de St. Jérǒme, Marseille
来源
PHYSICA STATUS SOLIDI | 1969年 / 35卷 / 02期
关键词
D O I
10.1002/pssb.19690350240
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A study is made of sulphur diffusion in copper single crystals using 35S between 550 and 1000 °C. The plot log D = f(1/T) was not a straight line. Different models were examined to explain the departure from linearity in the Arrhenius plot. A simple model is proposed, basing on classical mechanisms: monovacancy diffusion and diffusion along randomly distributed dislocations. For T > 800 °C, Q = 2.14 eV, and D0 = 23 cm2 s−1, the unusually high diffusion coefficients do not agree well with the value of Q, similar to that of self diffusion. For T < 800 °C, the dislocation model gives a binding energy of some tenths of an electron‐volt. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim
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页码:893 / &
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