IN-DEPTH PROFILING OF HYDROGEN IN OXIDIC MULTILAYER SYSTEMS

被引：16

作者：

WAGNER, W ^{[1
]}

RAUCH, F ^{[1
]}

OTTERMANN, C ^{[1
]}

BANGE, K ^{[1
]}

机构：

[1] SCHOTT GLASWERKE,RES & DEV,W-6500 MAINZ,GERMANY

来源：

SURFACE AND INTERFACE ANALYSIS | 1990年 / 16卷 / 1-12期

关键词：

D O I：

10.1002/sia.740160170

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The hydrogen concentration profiles of electrochromic multilayer systems produced by evaporation have been determined by means of nuclear reaction analysis. The H content of individual oxidic materials was found to be larger than for single films, especially for SiO2. The time‐dependent H uptake under various ambient conditions was investigated. Systems produced by ion plating were also profiled for hydrogen. Copyright © 1990 John Wiley & Sons Ltd.

引用

页码：331 / 334

页数：4

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