RADIATION EFFECTS ON THE SVX SILICON STRIP READOUT CHIP

被引：4

作者：

YAREMA, RJ ^{[1
]}

AMIDEI, D ^{[1
]}

BOHN, T ^{[1
]}

ZIMMERMAN, T ^{[1
]}

ELY, RP ^{[1
]}

HABER, C ^{[1
]}

KLEINFELDER, S ^{[1
]}

WESTER, W ^{[1
]}

VEJCIK, S ^{[1
]}

机构：

[1] JOHNS HOPKINS UNIV,BALTIMORE,MD 21218

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 02期

关键词：

D O I：

10.1109/23.106658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of radiation effects on early versions of the SVX silicon strip readout device has been completed. Test structures and full operating readout chips were exposed to Cobalt 60 gamma radiation and neutrons. Transistor threshold shifts and input noise density as a function of radiation are reported. Equivalent input noise as a function of radiation is also presented. In order to show the environment in which the SVX chip will operate and help interpret the radiation test results, measurements of radiation levels inside the CDF detector were made. These results are reported for the last CDF run. Copyright © 1990 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：434 / 438

页数：5