NEAR-FIELD EMISSION OF LEAD-SULFIDE-SELENIDE HOMOJUNCTION LASERS

被引：10

作者：

KIMBLE, HJ ^{[1
]}

机构：

[1] GM CORP,RES LABS,WARREN,MI 48090

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1980年 / 16卷 / 07期

关键词：

D O I：

10.1109/JQE.1980.1070564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：740 / 743

页数：4

共 15 条

[1]

[Anonymous], 1977, SEMICONDUCTOR LASERS

[2] GAIN-INDUCED GUIDING AND ASTIGMATIC OUTPUT BEAM OF GAAS LASERS [J].

COOK, DD ;

NASH, FR .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (04) :1660-1672

[3] CHARACTERISTICS OF A PROPAGATING GAUSSIAN BEAM [J].

DICKSON, LD .

APPLIED OPTICS, 1970, 9 (08) :1854-&

[4] TRANSVERSE-MODE STABILIZED GA1-XALXAS VISIBLE DIODE-LASERS [J].

KAJIMURA, T ;

KURODA, T ;

YAMASHITA, S ;

NAKAMURA, M ;

UMEDA, J .

APPLIED OPTICS, 1979, 18 (11) :1812-1815

[5] DIFFUSED HOMOJUNCTION LEAD-SULFIDE-SELENIDE DIODES WITH 140 K-LASER OPERATION [J].

LO, W ;

SWETS, DE .

APPLIED PHYSICS LETTERS, 1978, 33 (11) :938-940

[6]

LO W, COMMUNICATION

[7] MODE GUIDANCE PARALLEL TO JUNCTION PLANE OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].

NASH, FR .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4696-4707

[8] STRIPE-GEOMETRY PB1-XSNXTE DIODE LASERS [J].

RALSTON, RW ;

MELNGAILIS, I ;

CALAWA, AR ;

LINDLEY, WT .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :350-356

[9]

Ravich Y. I., 1979, SEMICONDUCTING LEAD

[10]

SMITH RA, 1964, SEMICONDUCTORS, P222

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