ELECTRONIC AND CRYSTALLOGRAPHIC STRUCTURE OF GAMMA-ALUMINA THIN-FILMS

被引：218

作者：

EALET, B

ELYAKHLOUFI, MH

GILLET, E

RICCI, M

机构：

[1] Laboratoire de Microscopie et Diffractions Electroniques-SERMEC, Faculté des Sciences et Techniques de St Jérôme, F-13397 Marseille Cedex 20

来源：

THIN SOLID FILMS | 1994年 / 250卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(94)90171-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the crystallographic and electronic structure of gamma-alumina surfaces obtained by thermal oxidation of Al foil. By combining X-ray photoelectron spectroscopy, electron energy loss spectroscopy, transmission electron microscopy and transmission electron diffraction investigations, we have shown that such gamma-alumina surfaces are mainly (100), (1 $($) over bar$$ 10) and (112) oriented and are characterized by a specific electronic structure in the band gap. The appearance of defect levels decreases the gap from 8.7 eV to 2.5 eV at the surface. These features are correlated to the ionicity of the gamma-alumina surface and could explain their chemical activity (i.e. acido-basic properties).

引用

页码：92 / 100

页数：9

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