GROWTH AND CHARACTERIZATION OF LATTICE-MATCHED EPITAXIAL-FILMS OF GAXIN1-XAS-INP BY LIQUID-PHASE EPITAXY

被引：29

作者：

PEARSALL, TP ^{[1
]}

HOPSON, RW ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1977年 / 48卷 / 10期

关键词：

D O I：

10.1063/1.323399

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4407 / 4409

页数：3

相关论文

共 15 条

[1] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS
ANTYPAS, GA
MOON, RL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) : 1574 - 1577
[2] COLBY JW, 1968, ADVANCES XRAY ANALYS, V11, P287
[3] ROOM-TEMPERATURE CW OPERATION OF GALNASP-INP DOUBLE-HETEROSTRUCTURE DIODE-LASERS EMITTING AT 1.1 MU-M
HSIEH, JJ
ROSSI, JA
DONNELLY, JP
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 709 - 711
[4] HSIEH JJ, 1977, N AM S GAAS RELATED
[5] SOLID-LIQUID EQUILIBRIA FOR QUATERNARY SOLID-SOLUTIONS INVOLVING COMPOUND SEMICONDUCTORS IN REGULAR SOLUTION APPROXIMATION
JORDAN, AS
ILEGEMS, M
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (04) : 329 - 342
[6] NEUBERGER M, 1972, 3 5 TERNARY SEMICOND, P5
[7] NEUSE CJ, 1972, IEEE T ELECTRON DEV, V17, P1067
[8] Panish M. B., 1972, PROGR SOLID STATE CH, V7, P39
[9] Panish M.B., 1970, J CHEM THERMODYN, V2, P299, DOI 10.1016/0021-9614(70)
[10] PHASE EQUILIBRIA IN SYSTEM AL-GA-AS-SN AND ELECTRICAL PROPERTIES OF SN-DOPED LIQUID-PHASE EPITAXIAL ALXGA1-XAS
PANISH, MB
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) : 2667 - 2675