CALCULATION OF MICROWAVE PERFORMANCE OF BUFFER LAYER GATE GAAS MESFET

被引：17

作者：

NAGASHIMA, A

UMEBACHI, S

KANO, G

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 05期

关键词：

D O I：

10.1109/T-ED.1978.19123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：537 / 539

页数：3

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