REAL-TIME CONTROLLED RF REACTOR FOR DEPOSITION OF A-SI - H THIN-FILMS

被引：27

作者：

ANDUJAR, JL

BERTRAN, E

CANILLAS, A

ESTEVE, J

ANDREU, J

MORENZA, JL

机构：

来源：

VACUUM | 1989年 / 39卷 / 7-8期

关键词：

D O I：

10.1016/0042-207X(89)90040-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：795 / 798

页数：4

共 8 条

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MORENZA, JL ;

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CODINA, JM .

THIN SOLID FILMS, 1984, 120 (01) :23-30

[2] INSITU OPTICAL CHARACTERIZATIONS FOR RF PLASMA DEPOSITED A-SI - H THIN-FILMS [J].

CANILLAS, A ;

BERTRAN, E ;

ANDUJAR, JL ;

MORENZA, JL .

VACUUM, 1989, 39 (7-8) :785-787

[3] DIAGNOSTICS IN PLASMA PROCESSING [J].

COBURN, JW .

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[4]

CONNELL GAN, 1979, AMORPHOUS SEMICONDUC, P78

[5]

HIROSE M, 1984, HYDROGENATED AMORP A, P9

[6] CONTAMINATION EFFECTS IN GLOW-DISCHARGE DEPOSITION SYSTEMS [J].

JANSEN, F ;

KUHMAN, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (01) :13-18

[7] DESIGN OF PLASMA-ETCHING AND DEPOSITION SYSTEMS [J].

KUMAGAI, HY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1800-1804

[8]

Mort J., 1986, PLASMA DEPOSITED THI

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