DOPANT MIGRATION IN CONDUCTING POLYMERS

被引：8

作者：

HOGERVORST, ACR

机构：

[1] TNO Plastics and Rubber Research Institute, NL-2600 JA Delft

来源：

SYNTHETIC METALS | 1994年 / 62卷 / 01期

关键词：

D O I：

10.1016/0379-6779(94)90195-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dopant migration in conducting polymers due to an applied potential difference over the sample has been investigated by computer simulations. Dopant ions migrate as a result of three influences: the electrical field due to the applied potential difference, the redox-potential gradient in the conducting polymer due to an uneven dopant distribution and the dopant concentration gradient. It has been found that an applied potential difference can cause strongly inhomogeneous dopant distributions and considerable changes in the sample conductance as a function of time. The simulation results are supported by experimental evidence.

引用

页码：27 / 34

页数：8

共 19 条

[1]

ALDISSI MJ, 1987, J MAT ED, V9, P333

[2] CONDUCTING POLYMERS IN REDOX DEVICES AND INTELLIGENT MATERIALS SYSTEMS [J].