COMMENTS ON HOT CARRIER NOISE IN FIELD-EFFECT TRANSISTORS

被引:9
作者
KLAASSEN, FM
机构
关键词
D O I
10.1109/T-ED.1971.17150
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:74 / &
相关论文
共 6 条
[1]  
BACHTOLD W, 1970, 1970 INT EL DEV M
[2]  
BECHTEL NG, 1970 ISSCC C DIG TEC, P50
[3]   NOISE TEMPERATURE OF HOT ELECTRONS IN GERMANIUM [J].
ERLBACH, E ;
GUNN, JB .
PHYSICAL REVIEW LETTERS, 1962, 8 (07) :280-&
[4]  
KLAASSEN FM, 1970, IEEE DEVICE, VED17, P858
[5]   FIELD-DEPENDENT MOBILITY ANALYSIS OF FIELD-EFFECT TRANSISTOR [J].
TROFIMENKOFF, FN .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11) :1765-+
[6]  
ZULEEG R, 1970, 1970 INT S GAAS