PHOTOMECHANICAL EFFECT IN P-TYPE ZINC TELLURIDE

被引：2

作者：

NAGABHOOSHANAM, M ^{[1
]}

VEERENDER, C ^{[1
]}

DUMKE, VR ^{[1
]}

机构：

[1] OSMANIA UNIV,DEPT PHYS,HYDERABAD 500007,ANDHRA PRADESH,INDIA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1991年 / 176卷 / 02期

关键词：

D O I：

10.1016/0925-8388(91)90032-Q

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The photomechanical effect in p-type ZnTe single crystals was observed via a study of the microhardness variation with and without IR photoexcitation (lambda = 790 nm). The surface softening was found to increase with increasing intensity of radiation. At all intensity levels, the surface softening was seen to decrease slowly up to 8 gf load and thereafter to decline rapidly towards zero. The strain energy acting on the covalent bonds was determined as 0.27 eV. The results are explained on the basis of ionization of photosensitive defect centres.

引用

页码：247 / 254

页数：8

共 18 条

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