RAMAN-SPECTRA OF POLYACETYLENE DOPED WITH ELECTRON-ACCEPTOR

被引：3

作者：

UCHIDA, Y

FURUKAWA, Y

TASUMI, M

机构：

[1] Department of Chemistry, School of Science, The University of Tokyo, Bunkyo-ku, Tokyo

来源：

SYNTHETIC METALS | 1995年 / 69卷 / 1-3期

关键词：

D O I：

10.1016/0379-6779(94)02361-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The Raman spectra of a polyacetylene film doped heavily with SO3 have been measured with excitation wavelengths between 488.0 and 1064 nm. Observed Raman bands are attributed to positively charged domains generated by SO3 doping. Doping-induced changes in the Raman spectra are summarized as follows. (1) The nu(1) and nu(3) bands observed in the region of 1575-1485 and 1147-1122 cm(-1) respectively, upshift upon doping. (2) The nu(1) and nu(3) bands become broad upon doping. (3) Small but significant upshifts of the nu(2) band in the region of 1301-1294 cm(-1) are observed upon p-type doping in contrast to downshifts for n-type doping.

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页码：55 / 56

页数：2

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