MOS CURRENT GAIN CELLS WITH ELECTRONICALLY VARIABLE GAIN AND CONSTANT BANDWIDTH

被引:32
作者
KLUMPERINK, EAM [1 ]
SEEVINCK, E [1 ]
机构
[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
关键词
Integrated Circuits - Semiconductor Devices; MOSFET;
D O I
10.1109/JSSC.1989.572648
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two MOS current gain cells that provide linear amplification of currents supplied by several linear MOS V-I converters are proposed. One has a voltage-controlled gain and the other a current-controlled gain. It is shown how linear current gain is obtained in these circuits, using the square-law MOS characteristic. The MOS gain cells have a constant (gain-independent) bandwidth. This is because the transconductance of a MOS transistor can be varied without affecting its gate-source capacitance, in contrast to the bipolar case. The gain can be made insensitive to temperature and IC processing. Experimental results demonstrating the feasibility of the concept are presented.
引用
收藏
页码:1465 / 1467
页数:3
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