SI(111)(SQUARE-ROOT-3 X SQUARE-ROOT-3)-AL SURFACE STUDIED BY ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY

被引：5

作者：

LI, ST ^{[1
]}

HASEGAWA, S ^{[1
]}

NAKAMURA, S ^{[1
]}

NAKASHIMA, H ^{[1
]}

机构：

[1] OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 9B期

关键词：

ANGLE-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY; SI(111)(SQUARE-ROOT-3 X SQUARE-ROOT-3)-AL SURFACE; AL ADATOMS; OCCUPIED AND UNOCCUPIED SURFACE STATE BANDS; SURFACE ONE-ELECTRON TRANSITION; SI-SI STRAINED BACK BONDS;

D O I：

10.1143/JJAP.30.L1671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The surface electronic structures of Si(111)(square-root 3 x square-root 3)-Al are investigated with the use of angle-resolved electron-energy-loss spectroscopy. Three new surface one-electron transitions (in specular reflection) are found at 1.8, 7.2, and 13.1 eV. Compared with the surface state band structures calculated by Northrup and STM results by Hamers and Demuth, the loss peak at 1.8 eV is ascribed to the one-electron transition between the occupied and unoccupied surface state bands which originate from the Al adatoms. The other two peaks are considered to be due to the Si-Si strained back bonds.

引用

页码：L1671 / L1673

页数：3

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