HOT IMPLANTATION OF NITROGEN IONS INTO GAAS1-XPX (X = 0.36)

被引：11

作者：

MAKITA, Y ^{[1
]}

GONDA, S ^{[1
]}

TANOUE, H ^{[1
]}

TSURUSHIMA, T ^{[1
]}

MAEKAWA, S ^{[1
]}

机构：

[1] ELECTROTECHN LAB, TANASHI, TOKYO, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1974年 / 13卷 / 03期

关键词：

D O I：

10.1143/JJAP.13.563

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：563 / 564

页数：2

相关论文

共 5 条

[1] LASER OPERATION OF GAAS1-XPX-N(X=0.37,77 DEGREES K) ON PHOTOPUMPED NN3 PAIR TRANSITIONS
DUPUIS, RD
HOLONYAK, N
LEE, MH
CAMPBELL, JC
CRAFORD, MG
FINN, D
KEUNE, DL
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (08) : 369 - 371
[2] EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES
GROVES, WO
HERZOG, AH
CRAFORD, MG
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 184 - &
[3] SPONTANEOUS AND STIMULATED PHOTOLUMINESCENCE ON NITROGEN A-LINE AND NN-PAIR LINE TRANSITIONS IN GAAS1-XPX-N
HOLONYAK, N
DUPUIS, RD
MACKSEY, HM
GROVES, WO
CRAFORD, MG
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) : 4148 - &
[4] Merz J. L., 1970, Radiation Effects, V6, P285, DOI 10.1080/00337577008236308
[5] LUMINESCENCE AND OPTICAL ABSORPTION OF IMPLANTED NITROGEN IN GAP
MERZ, JL
SADOWSKI, EA
RODGERS, JW
[J]. SOLID STATE COMMUNICATIONS, 1971, 9 (13) : 1037 - &