DIODE DETECTION OF INFORMATION STORED IN ELECTRON-BEAM ADDRESSED MOS STRUCTURE

被引：7

作者：

ELLIS, GW ^{[1
]}

POSSIN, GE ^{[1
]}

WILSON, RH ^{[1
]}

机构：

[1] GE,RES & DEV CTR,SCHENECTADY,NY 12301

来源：

关键词：

D O I：

10.1063/1.1655243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：419 / 421

页数：3

共 5 条

[1] ELECTRON BEAM DETECTION OF CHARGE STORAGE IN MOS CAPACITORS
HUBER, EE
COHEN, MS
SMITH, DO
[J]. APPLIED PHYSICS LETTERS, 1970, 16 (04) : 147 - &
[2] AN ELECTRON BEAM ACTIVATED SWITCH AND ASSOCIATED MEMORY
MACDONALD, NC
EVERHART, TE
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (02): : 158 - +
[3] MITCHELL JP, 1967, BELL SYST TECH J, V46, P1
[4] EFFECTS OF IONIZING RADIATION ON OXIDIZED SILICON SURFACES AND PLANAR DEVICES
SNOW, EH
GROVE, AS
FITZGERALD, DJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (07): : 1168 - +
[5] ZAININGER KH, 1967, RCA REV, V28, P208