RADIATION-HARDENED MNOS RAM TECHNOLOGY

被引：4

作者：

MARRAFFINO, P ^{[1
]}

NEWMAN, R ^{[1
]}

WEGENER, HAR ^{[1
]}

BOROVICKA, MB ^{[1
]}

LEWIS, ET ^{[1
]}

LODI, RJ ^{[1
]}

机构：

[1] SPERRY RAND CORP,SPERRY RES CTR,SUDBURY,MA 01776

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 08期

关键词：

D O I：

10.1109/T-ED.1978.19223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1054 / 1060

页数：7

共 8 条

[1] RADIATION HARDENING OF P-MOS DEVICES BY OPTIMIZATION OF THERMAL S102 GATE INSULATOR [J].

AUBUCHON, KG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :117-+

[2] DESIGN OPTIMIZATION OF RADIATION-HARDENED CMOS INTEGRATED-CIRCUITS [J].

FOSSUM, JG ;

DERBENWICK, GF ;

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2208-2213

[3] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES [J].

FROHMANB.D ;

LENZLINGER, M .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) :3307-+

[4]

MARRAFFINO P, AFWLTR74209 AIR FORC

[5]

ROGICH SG, 1975, AFALTR758 AIR FORC A

[6]

SEWELL FA, 1969, APPL PHYS LETT JAN, P188

[7]

WEGENER HAR, 1972, IEEE T NUCL SCI DEC

[8] CHARACTERIZATION OF THIN OXIDE MNOS MEMORY TRANSISTORS [J].

WHITE, MH ;

CRICCHI, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (12) :1280-&

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