VARIATIONS IN THE CARRIER CONCENTRATION IN ELEMENTAL AND COMPOUND SEMICONDUCTORS UTILIZING ELECTROLYTE ELECTROREFLECTANCE - TOPOGRAPHICAL INVESTIGATION

被引：25

作者：

POLLAK, FH

OKEKE, CE

VANIER, PE

RACCAH, PM

机构：

[1] Physics Department, Belfer Graduate School of Science, Yeshiva University, New York

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.326638

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Utilizing electrolyte electroreflectance we have developed a convenient nondestructive room-temperature technique for evaluating the topographical features of the variations in the carrier concentration across the surface of semiconductors with a spatial resolution of about 100 μm. We report measurements on several element and compound semiconductors including silicon, germanium, GaAs, and InSb. The advantages of this method in relation to other techniques will be discussed.

引用

页码：5375 / 5380

页数：6

共 23 条

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