EFFECT OF FIELD-DEPENDENT MOBILITY ON THE THRESHOLD VOLTAGE OF A SMALL GEOMETRY MOSFET

被引：7

作者：

AKERS, LA

机构：

来源：

SOLID-STATE ELECTRONICS | 1980年 / 23卷 / 02期

关键词：

D O I：

10.1016/0038-1101(80)90154-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：173 / 175

页数：3

相关论文

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