ELECTRON PARAMAGNETIC RESONANCE OF DEFECTS IN ION-IMPLANTED SILICON

The first EPR measurements of the identity of defects in an ion-implanted layer (< 15 000 Å) are reported. The SiSingle Bond signP3 center is the dominant paramagnetic defect produced at room temperature by 400-keV O + implantation in Al- and B-doped Lopex Si, and it anneals below 200°C. The SiSingle Bond signP1 center is the dominant defect remaining above 200°C, and it anneals near 350°C. Interstitial Al++ (SiSingle Bond signG18) are observed in the Al-doped sample; their number indicate that Si interstitials do not migrate over large distances into the unirradiated Si. Comparison of EPR and infrared data indicates that the Si divacancy is produced in the diamagnetic neutral charge state. © 1969 The American Institute of Physics.