NOVEL REACTOR FOR HIGH VOLUME LOW-COST SILICON EPITAXY

被引：34

作者：

BAN, VS

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90420-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：97 / 107

页数：11

相关论文

共 15 条

[1] CHEMISTRY AND TRANSPORT PHENOMENA OF CHEMICAL VAPOR-DEPOSITION OF SILICON FROM SICL4
BAN, VS
GILBERT, SL
[J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 284 - 289
[2] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .1. DEPOSITION FROM SICL2H2 AND ETCHING BY HCL
BAN, VS
GILBERT, SL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1382 - 1388
[3] CHEMICAL PROCESSES IN VAPOR-DEPOSITION OF SILICON .2. DEPOSITION FROM SICL3H AND SICL4
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (10) : 1389 - 1391
[4] TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
BAN, VS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (02) : 317 - 320
[5] BAN VS, 1977, 6TH P INT CVD C, P66
[6] BAN VS, 1977, Patent No. 4062318
[7] BAN VS, 1978, Patent No. 4082865
[8] BERKMAN S, 1977, HETEROEPITAXIAL SEMI
[9] EFFECTS OF GAS PRESSURE AND VELOCITY ON EPITAXIAL SILICON DEPOSITION BY HYDROGEN REDUCTION OF CHLOROSILANES
BRADSHAW, SE
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1967, 23 (04) : 381 - &
[10] DOW WM, 1950, ASME T, V72, P431