ELECTRICAL FORMING ACTION IN TE-SE-CD STRUCTURES

被引：9

作者：

ELAZAB, MI

CHAMPNESS, CH

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 01期

关键词：

D O I：

10.1109/T-ED.1980.19847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：255 / 260

页数：6

共 20 条

[1]

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[2]

Champness C. H., 1969, Proceedings of the International Symposium on the physics of selenium and tellurium, P349

[3] RECTIFYING TE-SE-CD STRUCTURES USING A SELENIUM SINGLE-CRYSTAL FILM [J].

CHAMPNESS, CH ;

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SANG, H .

APPLIED PHYSICS LETTERS, 1968, 12 (09) :314-+

[4]

CHAMPNESS CH, 1971, CONDUCTION LOW MOBIL, P267

[5] KAPAZITATSMESSUNGEN AN SELENGLEICHRICHTERN [J].

DOLEGA, U .

ZEITSCHRIFT FUR PHYSIK, 1962, 167 (01) :46-&

[6]

ELAZAB M, 1976, J ELECTRON MATER, V5, P381, DOI 10.1007/BF02663366

[7] PREPARATION AND CHARACTERIZATION OF TELLURIUM SURFACES [J].

ELAZAB, M ;

MCLAUGHLIN, CR ;

CHAMPNESS, CH .

JOURNAL OF CRYSTAL GROWTH, 1975, 28 (01) :1-7

[8]

ELAZAB M, 1979, THESIS MCGILL U

[9] THERMALLY STIMULATED CURRENTS IN EPITAXIALLY GROWN SELENIUM MONOCRYSTALLINE FILMS [J].

ELAZAB, MI ;

CHAMPNESS, CH .

APPLIED PHYSICS LETTERS, 1977, 31 (04) :295-297

[10] CRYSTALLINE MORPHOLOGY AND ELECTRICAL PROPERTIES OF SELENIUM EPITAXILLY GROWN ON TELLURIUM [J].

FUKUDA, H ;

SAKAI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1970, 9 (05) :429-&

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