TRANSIENT CARRIER AND FIELD-DYNAMICS IN QUANTUM-WELL PARALLEL TRANSPORT - FROM THE BALLISTIC TO THE QUASI-EQUILIBRIUM REGIME

被引:48
作者
SHA, WJ
RHEE, JK
NORRIS, TB
SCHAFF, WJ
机构
[1] UNIV MICHIGAN,CTR ULTRAFAST OPT SCI,ANN ARBOR,MI 48109
[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
[3] CORNELL UNIV,SCH ELECT ENGN,ITHACA,NY 14850
基金
美国国家科学基金会;
关键词
D O I
10.1109/3.159551
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have performed a series of experiments, applying femtosecond optical techniques to probe transient electron transport and electric field dynamics in high field parallel transport, in a horizontal p-i-n quantum-well structure. We have attempted to measure physical quantities associated with transport transients, such as electron distribution functions, electron velocity, and electron acceleration, by means of femtosecond absorption saturation, excitonic electroabsorption, and THz electromagnetic radiation, at electric fields of up to 16 kV/cm. Important transport phenomena such as ballistic acceleration on a time scale of 150 fs, and the onset of a saturated velocity on a time scale of 1 ps, have been observed in our experiments. Furthermore, we have measured the time-dependent electric field. We find that both space-charge screening and THz radiation contribute to collapse of the applied electric field at high carrier densities. Under such circumstances, transport and electric field dynamics are strongly coupled. We demonstrate an energy overshoot due to the field collapse coupled with strong electron-LO phonon scattering on a time scale of 200 fs. Self-consistent transport and field considerations are required in theoretical modeling.
引用
收藏
页码:2445 / 2455
页数:11
相关论文
共 47 条
[1]   GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].
ADACHI, S .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29
[2]  
[Anonymous], 1975, CLASSICAL ELECTRODYN
[3]   PICOSECOND PHOTOCONDUCTING HERTZIAN DIPOLES [J].
AUSTON, DH ;
CHEUNG, KP ;
SMITH, PR .
APPLIED PHYSICS LETTERS, 1984, 45 (03) :284-286
[4]   FEMTOSECOND INTERVALLEY SCATTERING IN GAAS [J].
BECKER, PC ;
FRAGNITO, HL ;
CRUZ, CHB ;
SHAH, J ;
FORK, RL ;
CUNNINGHAM, JE ;
HENRY, JE ;
SHANK, CV .
APPLIED PHYSICS LETTERS, 1988, 53 (21) :2089-2090
[5]   ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].
CHEMLA, DS ;
MILLER, DAB ;
SMITH, PW ;
GOSSARD, AC ;
WIEGMANN, W .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) :265-275
[6]   OPTICAL RECTIFICATION AT SEMICONDUCTOR SURFACES [J].
CHUANG, SL ;
SCHMITTRINK, S ;
GREENE, BI ;
SAETA, PN ;
LEVI, AFJ .
PHYSICAL REVIEW LETTERS, 1992, 68 (01) :102-105
[7]  
CHWALEK JM, 1991, OSA P, V9, P40
[8]  
CONNOLLY KM, SEMICONDUCTOR SCI TE
[9]   KILOHERTZ SYNCHRONOUS AMPLIFICATION OF 85-FEMTOSECOND OPTICAL PULSES [J].
DULING, IN ;
NORRIS, T ;
SIZER, T ;
BADO, P ;
MOUROU, GA .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (04) :616-618
[10]  
EASTMAN LF, 1982, ADV SOLID STATE PHYS, V2, P173