REENTRANT LAYER-BY-LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF METAL-ON-METAL SUBSTRATES

被引：454

作者：

KUNKEL, R

POELSEMA, B

VERHEIJ, LK

COMSA, G

机构：

[1] Institut F̈r Grenzflächenforschung und Vakuumphysik, Kernforschungsanlage J̈lich Gmbh, Postfach 1913, D-517, J̈lich

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.65.733

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The discovery of a reentrant layer-by-layer growth during molecular-beam epitaxy of Pt on Pt(111) is reported. Explanations of the reentrant behavior based on previous field-ion-microscopy observations are proposed. © 1990 The American Physical Society.

引用

页码：733 / 736

页数：4

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