GROWTH OF II-VI COMPOUNDS BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION - PROPYLENE SULFIDE - A NOVEL SULFUR-CONTAINING PRECURSOR FOR MOCVD GROWTH OF ZNS

被引：4

作者：

ALMOND, MJ ^{[1
]}

BEER, MP ^{[1
]}

COOKE, SA ^{[1
]}

RICE, DA ^{[1
]}

YATES, HM ^{[1
]}

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT CHEM,MANCHESTER M60 1QD,LANCS,ENGLAND

来源：

JOURNAL OF MATERIALS CHEMISTRY | 1995年 / 5卷 / 06期

关键词：

D O I：

10.1039/jm9950500853

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

As part of our continuing investigations into the problem of pre-reaction in MOCVD systems, layers of ZnS have been grown onto GaAs substrates using Me(2)Zn and the novel sulfur-containing precursor propylene sulfide. Layers have been produced in the temperature range 300-550 degrees C and have been characterized by XRD. The results indicate that the layers with the highest degree of crystallinity are grown towards the higher end of this temperature range. Most significantly, no pre-reaction is observed between these precursors.

引用

页码：853 / 854

页数：2

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