REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MONITORED GROWTH OF INFINITE-LAYER SRCUO2 CACUO2 THIN-FILM HETEROSTRUCTURES

被引:23
作者
GUPTA, A
SHAW, TM
CHERN, MY
HUSSEY, BW
GULOY, AM
SCOTT, BA
机构
[1] IBM Thomas J. Watson Research Center, Yorktown Heights
关键词
D O I
10.1006/jssc.1995.1027
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Reflection high-energy electron diffraction (RHEED) intensity oscillations have been used for controlled, layer-by-layer growth of thin film heterostructures of the infinite-layer end-member compounds SrCuO2 and CaCuO2. These artificially structured films are grown on (100) SrTiO3 substrates by pulsed laser deposition under a low-pressure oxygen ambient, using a combination of atomic oxygen and pulsed molecular oxygen, at a relatively low temperature of 500 degrees C. X-ray diffraction and transmission electron microscopy are used for the structural characterization of the epitaxial heterostructures. Systematic variations in the electrical properties of the multilayers have been observed as a function of the thickness of the SrCuO2 and CaCuO2 layers for unit-cell-level modulation periods. (C) 1995 Academic Press, Inc.
引用
收藏
页码:190 / 198
页数:9
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