MICROWAVE INSTABILITY IN N-TYPE INDIUM ANTIMONIDE

被引：6

作者：

BEKEFI, G

BERS, A

BRUECK, SRJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.16009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：593 / &

共 13 条

[1]

BEKEFI G, 1966, RADIATION PROCESSES, P334

[2]

BERS A, 1965, 79 MASS I TECHN RES, P99

[3]

BRUECK SRJ, 1966, 83 MASS I TECHN RES, P72

[4] MICROWAVE EMISSION FROM INDIUM ANTIMONIDE (77 DEGREES K ELECTRIC AND MAGNETIC FIELD EFFECTS E ]= 12 V/CM H ]= 1500 G E) [J].

BUCHSBAUM, SJ ;

CHYNOWETH, AG ;

FELDMANN, WL .

APPLIED PHYSICS LETTERS, 1965, 6 (04) :67-+

[5] A NEW TYPE OF OSCILLATION IN N-TYPE INDIUM ANTIMONIDE - (77 DEGREES K COMBINED MAGNETIC AND PULSED ELECTRIC FIELDS NARROWBAND OSCILLATION MICROWAVE NOISE E) [J].

EIDSON, JC ;

KINO, GS .

APPLIED PHYSICS LETTERS, 1966, 8 (07) :183-&

[6] CONTINUOUS MICROWAVE EMISSION FROM INDIUM ANTIMONIDE [J].

FERRY, DK ;

YOUNG, RW ;

DOUGAL, AA .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (11) :3684-&

[7]

Fried B D, 2015, PLASMA DISPERSION FU

[8]

LARRABEE RD, 1964, P S PLASMA EFFECTS S, V2, P181

[9]

LARRABEE RD, 1964, B AM PHYS SOC, V9, P258

[10] MICROWAVE EMISSION FROM INSB FOR LOW ELECTRIC FIELDS - (E]3V/CM-B]4KG-MAGNETIC FIELD EFFECT 77 DEGREES K E) [J].

MUSHA, T ;

LINDVALL, F ;

HAGGLUND, J .

APPLIED PHYSICS LETTERS, 1966, 8 (07) :157-&

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