MAGNETIZATION AND HALL-EFFECT IN AMORPHOUS ALLOYS CONTAINING MN

被引:3
作者
MCGUIRE, TR
TAYLOR, RC
机构
[1] IBM Research Center, Yorktown Heights
关键词
D O I
10.1063/1.327264
中图分类号
O59 [应用物理学];
学科分类号
摘要
This study of amorphous Gd-Mn, Y-Mn and their ternary alloys with Co prepared as films by co-evaporation indicates that, (a) the Mn moment is compositionally dependent going from ?2μB to 0.5μB per Mn with increased Mn concentration in the alloy, (b) Gd-Mn and Gd- (CoMn) order with antiparallel Gd and Mn moments or (CoMn) moments while Y-Mn samples remain paramagnetic, (c) Curie temperatures are relatively constant with composition which we have interpreted in terms of the Mn-Mn exchange interaction, and (d) the spontaneous Hall effect for Mn as given by ρH/ρ (Hall resistivity/sample resistivity) is about -0.01 per μB of Mn which is opposite in sign to Fe or Co.
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页码:1605 / 1607
页数:3
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