ALGAAS/INGAAS HETEROSTRUCTURES WITH DOPED CHANNELS FOR DISCRETE DEVICES AND MONOLITHIC AMPLIFIERS

被引：14

作者：

SAUNIER, P

TSERNG, HQ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40911

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2231 / 2235

页数：5

共 7 条

[1] PULSE-DOPED ALGAAS INGAAS PSEUDOMORPHIC MODFETS [J].

MOLL, N ;

HUESCHEN, MR ;

FISCHERCOLBRIE, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) :879-886

[2] A DOUBLE-HETEROJUNCTION DOPED-CHANNEL PSEUDOMORPHIC POWER HEMT WITH A POWER-DENSITY OF 0.85 W/MM AT 55 GHZ [J].

SAUNIER, P ;

MATYI, RJ ;

BRADSHAW, K .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (08) :397-398

[3] HIGH-EFFICIENCY MILLIMETER-WAVE GAAS/GAALAS POWER HEMTS [J].

SAUNIER, P ;

LEE, JW .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) :503-505

[4]

SMITH P, 1987, IEDM, P854

[5]

Smith P. M., 1985, Proceedings of the IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits (Cat. No.85CH2173-3), P189

[6]

SMITH PM, 1987, MTT S, P749

[7]

SMITH PM, 1988, MTT S, P927

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