CURRENT STATUS OF THE TECHNOLOGY OF SILICON SEPARATED BY IMPLANTATION OF OXYGEN

被引：7

作者：

BAUMGART, H

VANOMMEN, AH

机构：

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(89)90085-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：111 / 122

页数：12

共 37 条

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[3]

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[7] PHOTOLUMINESCENCE STUDIES OF SILICON-ON-INSULATOR SUBSTRATES FORMED BY OXYGEN IMPLANTATION [J].

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HEMMENT, PLF .

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[8]

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[9]

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[10]

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