THEORY OF ACCEPTOR LEVELS IN GERMANIUM

被引:73
作者
KOHN, W
SCHECHTER, D
机构
来源
PHYSICAL REVIEW | 1955年 / 99卷 / 06期
关键词
D O I
10.1103/PhysRev.99.1903
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1903 / 1904
页数:2
相关论文
共 10 条
[1]   OPTICAL EFFECTS IN BULK SILICON AND GERMANIUM [J].
BRIGGS, HB .
PHYSICAL REVIEW, 1950, 77 (02) :287-287
[2]  
DEBYE PP, 1953, PHYS REV, V91, P208
[3]  
DEXTER, COMMUNICATION
[4]  
DRESSELHAUS, 1950, PHYS REV, V77, P287
[5]   IONIZATION ENERGIES OF GROUP-III AND GROUP-V ELEMENTS IN GERMANIUM [J].
GEBALLE, TH ;
MORIN, FJ .
PHYSICAL REVIEW, 1954, 95 (04) :1085-1086
[6]  
KAHN HA, 1955, PHYS REV, V97, P1647
[7]   THEORY OF DONOR AND ACCEPTOR STATES IN SILICON AND GERMANIUM [J].
KITTEL, C ;
MITCHELL, AH .
PHYSICAL REVIEW, 1954, 96 (06) :1488-1493
[8]   QUANTUM THEORY OF CYCLOTRON RESONANCE IN SEMICONDUCTORS [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1954, 96 (02) :529-530
[9]   DIRECTIONAL PROPERTIES OF THE CYCLOTRON RESONANCE IN GERMANIUM [J].
LAX, B ;
ZEIGER, HJ ;
DEXTER, RN ;
ROSENBLUM, ES .
PHYSICAL REVIEW, 1954, 93 (06) :1418-1420
[10]   MOTION OF ELECTRONS AND HOLES IN PERTURBED PERIODIC FIELDS [J].
LUTTINGER, JM ;
KOHN, W .
PHYSICAL REVIEW, 1955, 97 (04) :869-883