BROADENING OF IMPURITY LEVELS IN SILICON

被引：84

作者：

LAX, M

BURSTEIN, E

机构：

来源：

PHYSICAL REVIEW | 1955年 / 100卷 / 02期

关键词：

D O I：

10.1103/PhysRev.100.592

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：592 / 602

页数：11

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