FABRICATION OF MICRON SIZE NB/AL-AL2O3/NB JUNCTIONS WITH A TRILEVEL RESIST LIFTOFF PROCESS

被引：16

作者：

LICHTENBERGER, AW ^{[1
]}

LEA, DM ^{[1
]}

LI, C ^{[1
]}

LLOYD, FL ^{[1
]}

FELDMAN, MJ ^{[1
]}

MATTAUCH, RJ ^{[1
]}

PAN, SK ^{[1
]}

KERR, AR ^{[1
]}

机构：

[1] NATL RADIO ASTRON OBSERV,CHARLOTTESVILLE,VA 22903

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/20.133884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A trilevel resist, consisting of polyimide planarization, SiO2 barrier, and photoresist, is used to pattern junction areas in Nb/Al-Al2O3/Nb trilayer films. After reactive ion etching to define the junction areas, the perimeter of the junction is revealed and excellent liftoff structures are defined with an oxygen plasma shrink of the exposed polyimide sidewalls. A subsequently deposited insulation layer seals the sides and the top surface along the perimeter of the Nb counter electrode button. High quality SIS junctions with diameters as small as 1.2-mu-m and V(m) as large as 1,500 mV at 2.0 K have been fabricated. An SIS receiver using these junctions with integrated tuning elements has a DSB noise temperature of 58 K at 230 GHz. This is believed to be the lowest receiver noise temperature ever reported at this frequency.

引用

页码：3168 / 3171

页数：4

共 15 条

[1] FABRICATION OF NBCN/PBBI EDGE JUNCTIONS WITH EXTREMELY LOW LEAKAGE CURRENTS [J].